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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN44N100P Datasheet PDF
IXFN44N100P
$ 36.386

IXFN44N100P Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
220 mΩ
Polarity
N-CH
Power Dissipation
890 W
Threshold Voltage
6.5 V
Drain to Source Voltage (Vds)
1000 V
Breakdown Voltage (Drain to Source)
1000 V
Continuous Drain Current (Ids)
37A
Rise Time
68 ns
Input Capacitance (Ciss)
19000pF @25V(Vds)
Fall Time
54 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
890W (Tc)

IXFN44N100P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.42 mm
Size-Height
12.22 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN44N100P Documents

IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
4 Pages / 0.1 MByte

IXFN44N100 Documents

IXYS Semiconductor
SOT-227B N-CH 1000V 38A
IXYS Semiconductor
SOT-227B N-CH 1000V 37A
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