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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTT88N30P Datasheet PDF
IXTT88N30P
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IXTT88N30P Datasheet PDF (5 Pages)
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IXTT88N30P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
40 mΩ
Polarity
N-CH
Power Dissipation
600 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
300 V
Breakdown Voltage (Drain to Source)
300 V
Continuous Drain Current (Ids)
88A
Rise Time
24 ns
Input Capacitance (Ciss)
6300pF @25V(Vds)
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
600W (Tc)

IXTT88N30P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
14 mm
Size-Width
16.05 mm
Size-Height
5.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTT88N30P Documents

IXYS Semiconductor
5 Pages / 0.31 MByte

IXTT88N30 Documents

IXYS Semiconductor
TO-268 N-CH 300V 88A
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