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IXTT88N30P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-268-3

Description:

TO-268 N-CH 300V 88A

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Documentation:

IXTT88N30P Datasheet (5 Pages)

IXTT88N30P Datasheet PDF (5 Pages)

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IXTT88N30P Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-268-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

40 mΩ

Polarity

N-CH

Power Dissipation

600 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

300 V

Breakdown Voltage (Drain to Source)

300 V

Continuous Drain Current (Ids)

88A

Rise Time

24 ns

Input Capacitance (Ciss)

6300pF @25V(Vds)

Fall Time

25 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

600W (Tc)

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IXTT88N30P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

14 mm

Size-Width

16.05 mm

Size-Height

5.1 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTT88N30P Environmental

IXTT88N30P Function Overview

IXTT88N30P Documents

IXTT88N30P Datasheet

IXYS Semiconductor

5 Pages / 0.31 MByte

IXTT88N30 Documents

IXTT88N30P Datasheet PDF

IXYS Semiconductor

TO-268 N-CH 300V 88A

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