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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXYH40N90C3D1 Datasheet PDF
IXYH40N90C3D1
$ 6.17
IXYH40N90C3D1 Datasheet PDF (8 Pages)
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IXYH40N90C3D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
500000 mW
Breakdown Voltage (Collector to Emitter)
900 V
Reverse recovery time
100 ns
Input Power (Max)
500 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500000 mW

IXYH40N90C3D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXYH40N90C3D1 Documents

IXYS Semiconductor
8 Pages / 0.17 MByte
IXYS Semiconductor
7 Pages / 0.18 MByte

IXYH40N90C3 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 900V 105A 600000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 900V 90A 500000mW 3Pin(3+Tab) TO-247AD
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