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Part Datasheet Search > MOSFETs > Infineon > SPD08P06PGBTMA1 Datasheet PDF
SPD08P06PGBTMA1
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SPD08P06PGBTMA1 Datasheet PDF (9 Pages)
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SPD08P06PGBTMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
42 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.23 Ω
Polarity
P-Channel
Power Dissipation
42 W
Threshold Voltage
3 V
Input Capacitance
335 pF
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
8.83A
Rise Time
46 ns
Input Capacitance (Ciss)
420pF @25V(Vds)
Input Power (Max)
42 W
Fall Time
14 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
42W (Tc)

SPD08P06PGBTMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

SPD08P06PGBTMA1 Documents

Infineon
9 Pages / 0.58 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte

SPD08P06 Documents

Infineon
DPAK P-CH 60V 8.83A
Infineon
DPAK P-CH 60V 8.83A
Infineon
Trans MOSFET P-CH 60V 8.83A 3Pin(2+Tab) TO-252
Infineon
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3Pin
Siemens Semiconductor
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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