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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXYN100N120C3 Datasheet PDF
IXYN100N120C3
$ 35.93
IXYN100N120C3 Datasheet PDF (7 Pages)
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IXYN100N120C3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-227-4
Power Dissipation
830 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
6nF @25V
Input Power (Max)
830 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
830 W

IXYN100N120C3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.07 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXYN100N120C3 Documents

IXYS Semiconductor
7 Pages / 0.16 MByte
IXYS Semiconductor
7 Pages / 0.23 MByte

IXYN100N120 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 134A 690000mW 4Pin SOT-227B
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 152A 830000mW 4Pin SOT-227B
IXYS Semiconductor
IXYS SEMICONDUCTOR IXYN100N120B3H1 IGBT Array & Module Transistor, N Channel, 165A, 2.6V, 690W, 1.2kV, SOT-227B New
Littelfuse
Insulated Gate Bipolar Transistor,
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