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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXYX100N120C3 Datasheet PDF
IXYX100N120C3
$ 19.384
IXYX100N120C3 Datasheet PDF (7 Pages)
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IXYX100N120C3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
1150 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.15 kW

IXYX100N120C3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXYX100N120C3 Documents

IXYS Semiconductor
7 Pages / 0.19 MByte
IXYS Semiconductor
6 Pages / 0.19 MByte

IXYX100N120 Documents

IXYS Semiconductor
IGBT 1200V 188A Through Hole High-Speed IGBT - ISOPLUS247
IXYS Semiconductor
IXYS SEMICONDUCTOR IXYX100N120B3 IGBT Single Transistor, 225A, 2.2V, 1.15kW, 1.2kV, PLUS247, 3Pins New
Littelfuse
Insulated Gate Bipolar Transistor,
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