IXZ308N120 Datasheet PDF - IXYS Semiconductor

●The IXZ308N120 is a 1200V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.

● High isolation voltage

● Excellent thermal transfer

● Increased temperature and power cycling capability

● IXYS advanced low Qg process

● Low gate charge and capacitances offer easier to drive and faster switching

● Very low insertion inductance

● No beryllium oxide (BeO) or other hazardous materials

● Easy to mount, no insulators needed

● High power density