JANTX2N5666 Datasheet PDF - Microsemi

●Implement this NPN JANTX2N5666 GP BJT from Microsemi to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.