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Part Datasheet Search > BJTs > Fairchild > KSC1815YBU Datasheet PDF
KSC1815YBU
$ 0.046
KSC1815YBU Datasheet PDF (5 Pages)
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KSC1815YBU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
50.0 V
Current Rating
150 mA
Case/Package
TO-92-3
Polarity
NPN
Power Dissipation
400 mW
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
0.15A
hFE Min
120 @2mA, 6V
hFE Max
700
Input Power (Max)
400 mW
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-55 ℃

KSC1815YBU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Size-Length
4.58 mm
Size-Width
3.86 mm
Size-Height
4.58 mm
Operating Temperature
150℃ (TJ)

KSC1815YBU Documents

Fairchild
5 Pages / 0.2 MByte
Fairchild
7 Pages / 0.19 MByte

KSC1815 Documents

Fairchild
NPN Epitaxial Silicon Transistor
ON Semiconductor
Trans GP BJT NPN 50V 0.15A 3Pin TO-92 Ammo
Fairchild
Trans GP BJT NPN 50V 0.15A 3Pin TO-92 Ammo
Fairchild
Trans GP BJT NPN 50V 0.15A 3Pin TO-92 Ammo
Fairchild
NPN 400mW 50V 150mA Through Hole Epitaxial Silicon Transistor - TO-92-3
ON Semiconductor
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Fairchild
Trans GP BJT NPN 50V 0.15A 3Pin TO-92 Bulk
Fairchild
TO-92 NPN 50V 0.15A
ON Semiconductor
NPN Epitaxial Silicon Transistor
Fairchild
Bipolar Transistors - BJT NPN Epitaxial Transistor
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