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SI4435DDY-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOIC-8

Description:

SOIC-8P-CH 30V 8.1A 24mΩ

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Documentation:

SI4435DDY-T1-GE3 Datasheet (10 Pages)

Package Outline Dimension on7 Page 8 Page

Part Numbering System on1 Page

SI4435DDY-T1-GE3 Datasheet PDF (10 Pages)

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SI4435DDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0195 Ω

Polarity

P-Channel

Power Dissipation

2.5 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

-8.10 A

Input Capacitance (Ciss)

1350pF @15V(Vds)

Input Power (Max)

5 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2500 mW

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SI4435DDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.5 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

2500

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SI4435DDY-T1-GE3 Environmental

SI4435DDY-T1-GE3 Function Overview

SI4435DDY-T1-GE3 Documents

SI4435DDY-T1-GE3 Datasheet

VISHAY

10 Pages / 0.26 MByte

SI4435DDY-T1-GE3 Other Datasheet PDF

VISHAY

10 Pages / 0.26 MByte

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SI4435DDY-T1-GE3 Datasheet PDF

VISHAY

SOIC-8P-CH 30V 8.1A 24mΩ

SI4435DDY-T1-E3 Datasheet PDF

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SOIC-8P-CH 30V 8.1A 24mΩ

SI4435DDY-T1-E3 Datasheet PDF

Vishay Siliconix

Trans MOSFET P-CH 30V 8.1A 8Pin SOIC N T/R

SI4435DDY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET; Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ω; ID -7A; SO-8; PD 1.5W; VGS +/-20V; -55

SI4435DDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ω; ID -7A; SO-8; PD 1.5W; VGS +/-20V; -55

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