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Part Datasheet Search > BJTs > ON Semiconductor > KSC2073TU Datasheet PDF
KSC2073TU
$ 0.27
KSC2073TU Datasheet PDF (4 Pages)
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KSC2073TU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
4 MHz
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Power Dissipation
25 W
Breakdown Voltage (Collector to Emitter)
150 V
hFE Min
40 @500mA, 10V
Input Power (Max)
25 W
DC Current Gain (hFE)
40
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
25000 mW

KSC2073TU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Material
Silicon
Operating Temperature
150℃ (TJ)

KSC2073TU Documents

ON Semiconductor
4 Pages / 0.1 MByte
ON Semiconductor
6 Pages / 0.27 MByte
ON Semiconductor
1 Pages / 0.09 MByte

KSC2073 Documents

Fairchild
Trans GP BJT NPN 150V 1.5A 3Pin(3+Tab) TO-220AB Bulk
Samsung
NPN Epitaxial Silicon Transistor
ON Semiconductor
Power Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Freescale
TRANS NPN 150V 1.5A TO-220
Fairchild
Trans GP BJT NPN 150V 1.5A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
TRANS NPN 150V 1.5A TO-220
Fairchild
Trans GP BJT NPN 150V 1.5A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
TRANS NPN 150V 1.5A TO-220
Fairchild
Trans GP BJT NPN 150V 1.5A 3Pin(3+Tab) TO-220AB Rail
Fairchild
Trans GP BJT NPN 150V 1.5A 3Pin(3+Tab) TO-220AB Rail
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