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KSC5026MOS Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-126-3

Description:

Trans GP BJT NPN 800V 1.5A 3Pin(3+Tab) TO-126 Bulk

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

KSC5026MOS Datasheet (6 Pages)

Package Outline Dimension on5 Page

Part Numbering System on1 Page

KSC5026MOS Datasheet PDF (6 Pages)

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KSC5026MOS Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

15 MHz

Number of Pins

3 Pin

Case/Package

TO-126-3

Number of Positions

3 Position

Power Dissipation

20 W

Breakdown Voltage (Collector to Emitter)

800 V

hFE Min

20 @100mA, 5V

Input Power (Max)

20 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

20000 mW

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KSC5026MOS Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bag

Material

Silicon

Operating Temperature

150℃ (TJ)

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KSC5026MOS Environmental

KSC5026MOS Function Overview

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KSC5026MOS Datasheet

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6 Pages / 0.11 MByte

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