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MIXA40WB1200TED Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

E2-Pack

Description:

Igbt Module 1200V 40A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

MIXA40WB1200TED Datasheet (8 Pages)

MIXA40WB1200TED Specifications

TYPE

DESCRIPTION

Case/Package

E2-Pack

Power Dissipation

195 W

Breakdown Voltage (Collector to Emitter)

1200 V

Input Power (Max)

195 W

Operating Temperature (Max)

125 ℃

Operating Temperature (Min)

40 ℃

Power Dissipation (Max)

195000 mW

View Datasheet >

MIXA40WB1200TED Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Size-Length

107.5 mm

Size-Width

45 mm

Size-Height

17 mm

Operating Temperature

-40℃ ~ 125℃ (TJ)

View Datasheet >

MIXA40WB1200TED Environmental

MIXA40WB1200TED Function Overview

MIXA40WB1200TED Documents

MIXA40WB1200TED Datasheet

IXYS Semiconductor

8 Pages / 0.21 MByte

MIXA40WB1200TED Other Datasheet PDF

IXYS Semiconductor

8 Pages / 0.23 MByte

MIXA40WB1200 Documents

MIXA40WB1200TED Datasheet PDF

IXYS Semiconductor

Igbt Module 1200V 40A

MIXA40WB1200TED Datasheet PDF

Littelfuse

Trans IGBT Module N-CH 1200V 60A 195000mW E2-Pack Box

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