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Part Datasheet Search > IGBTs > IXYS Semiconductor > MIXA60WB1200TEH Datasheet PDF
MIXA60WB1200TEH
$ 90.758
MIXA60WB1200TEH Datasheet PDF (8 Pages)
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MIXA60WB1200TEH Specifications

TYPE
DESCRIPTION
Number of Pins
24 Pin
Case/Package
E3
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
290 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
290000 mW

MIXA60WB1200TEH Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
-40℃ ~ 125℃ (TJ)

MIXA60WB1200TEH Documents

IXYS Semiconductor
8 Pages / 0.23 MByte

MIXA60WB1200 Documents

IXYS Semiconductor
Igbt Module 1200V 60A
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