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Part Datasheet Search > BJTs > ON Semiconductor > MJ21193G Datasheet PDF
MJ21193G
$ 5.059
MJ21193G Datasheet PDF (7 Pages)
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MJ21193G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
4 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-250 V
Current Rating
-16.0 A
Case/Package
TO-204-2
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
250 W
Breakdown Voltage (Collector to Emitter)
250 V
Thermal Resistance
0.7℃/W (RθJC)
Continuous Collector Current
16A
hFE Min
25 @8A, 5V
hFE Max
75
Input Power (Max)
250 W
DC Current Gain (hFE)
75
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
250000 mW

MJ21193G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Material
Silicon
Size-Length
39.37 mm
Size-Width
26.67 mm
Size-Height
8.51 mm
Operating Temperature
-65℃ ~ 200℃

MJ21193G Documents

ON Semiconductor
7 Pages / 0.16 MByte
ON Semiconductor
7 Pages / 0.16 MByte
ON Semiconductor
1 Pages / 0.03 MByte
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MJ21193 Documents

ON Semiconductor
TO-3 PNP 250V 16A
Motorola
16 ampere complementary silicon power transistors 250 volts 250W
Inchange Semiconductor
Transistor
ON Semiconductor
TO-3 PNP 250V 16A
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