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Part Datasheet Search > BJTs > ST Microelectronics > MJD112T4 Datasheet PDF
MJD112T4
$ 0.309

MJD112T4 Datasheet PDF - ST Microelectronics

Manufacturer:
ST Microelectronics
Category:
BJTs
Case Package:
TO-252-3
Description:
Trans Darlington NPN 100V 2A 20000mW 3Pin(2+Tab) TO-252 T/R
Pictures:
3D Model
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Product Pictures
Documentation:
MJD112T4 Datasheet (10 Pages)
Package Outline Dimension on7 Page8 Page
MJD112T4 Datasheet PDF (10 Pages)
View Datasheet
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MJD112T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
2.00 A
Case/Package
TO-252-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
20 W
Breakdown Voltage (Collector to Emitter)
100 V
hFE Min
1000 @2A, 3V
Input Power (Max)
20 W
DC Current Gain (hFE)
1000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
25MHz (Min)
Power Dissipation (Max)
20000 mW
View Datasheet >

MJD112T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)
View Datasheet >

MJD112T4 Documents

MJD112T4 Datasheet
ST Microelectronics
10 Pages / 0.37 MByte
MJD112T4 Notice File
ST Microelectronics
3 Pages / 0.11 MByte
MJD112T4 Other References
ST Microelectronics
1 Pages / 0.13 MByte

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