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Part Datasheet Search > BJTs > ON Semiconductor > MJE13003G Datasheet PDF
MJE13003G
$ 1.474
MJE13003G Datasheet PDF (8 Pages)
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MJE13003G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
400 V
Current Rating
1.50 A
Case/Package
TO-126-3
Polarity
NPN
Power Dissipation
1.40 W
Breakdown Voltage (Collector to Emitter)
400 V
Continuous Collector Current
1.5A
hFE Min
8 @500mA, 2V
Input Power (Max)
1.4 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1400 mW

MJE13003G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Box
Material
Silicon
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJE13003G Documents

ON Semiconductor
8 Pages / 0.1 MByte
ON Semiconductor
5 Pages / 0.56 MByte

MJE13003 Documents

ON Semiconductor
TRANS NPN 400V 1.5A TO225
Motorola
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40W
Micro Commercial Components
NPN Silicon Plastic-Encapsulate Transistor
ST Microelectronics
Bipolar Transistors - BJT NPN 400V
Central Semiconductor
Trans GP BJT NPN 400V 1.5A 3Pin(3+Tab) TO-126 Box
Mospec
POWER TRANSISTORS(1.5A,300-400V,40W)
KEC(Korea Electronics)
Switching Transistor
Freescale
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40W
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