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Part Datasheet Search > BJTs > ON Semiconductor > MJE253G Datasheet PDF
MJE253G
$ 0.242
MJE253G Datasheet PDF (6 Pages)
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MJE253G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
40 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-4.00 A
Case/Package
TO-126-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
15 W
Breakdown Voltage (Collector to Emitter)
100 V
Thermal Resistance
8.34℃/W (RθJC)
Continuous Collector Current
4A
hFE Min
40 @200mA, 1V
hFE Max
180
Input Power (Max)
1.5 W
DC Current Gain (hFE)
40
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
15000 mW

MJE253G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Size-Length
7.74 mm
Size-Width
2.66 mm
Size-Height
11.04 mm
Operating Temperature
-65℃ ~ 150℃

MJE253G Documents

ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
8 Pages / 0.23 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
6 Pages / 0.12 MByte
ON Semiconductor
11 Pages / 1.83 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MJE253 Documents

ON Semiconductor
TO-225-3 PNP 100V 4A
Central Semiconductor
Trans GP BJT PNP 100V 4A 3Pin TO-126
TI
PNP, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN
Motorola
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15W
Advanced Semiconductor
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN
New Jersey Semiconductor
Trans GP BJT PNP 100V 4A 3Pin TO-126t
Inchange Semiconductor
Transistor
ON Semiconductor
TO-225 PNP 100V 4A
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