MBRD1035CTLT4G Datasheet PDF - ON Semiconductor

●The MBRD1035CTLT4G is a SWITCHMODE™ DPAK surface-mount Power Rectifier with moulded epoxy case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free-wheeling diode and polarity protection diodes.

● All external surfaces corrosion-resistant

● Highly stable oxide passivated junction

● Guard-ring for stress protection

● Matched dual die construction - may be paralleled for high current output

● High dv/dt capability

● Short heat-sink tap manufactured - Not sheared

● Very low forward-voltage drop

● UL94V-0 Flammability rating

● AEC-Q101 qualified and PPAP capable