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Part Datasheet Search > BJTs > ON Semiconductor > MJE5852G Datasheet PDF
MJE5852G
$ 0.82
MJE5852G Datasheet PDF (9 Pages)
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MJE5852G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-400 V
Current Rating
-8.00 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
80 W
Breakdown Voltage (Collector to Emitter)
400 V
Thermal Resistance
1.25℃/W (RθJC)
Continuous Collector Current
8A
hFE Min
5 @5A, 5V
Input Power (Max)
80 W
DC Current Gain (hFE)
15
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
80000 mW

MJE5852G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.28 mm
Size-Width
4.83 mm
Size-Height
9.28 mm
Operating Temperature
-65℃ ~ 150℃

MJE5852G Documents

ON Semiconductor
9 Pages / 0.21 MByte
ON Semiconductor
20 Pages / 2.6 MByte
ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MJE5852 Documents

ON Semiconductor
TO-220-3 PNP 400V 8A
ST Microelectronics
Trans GP BJT PNP 400V 8A 3Pin(3+Tab) TO-220 Tube
Motorola
8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80W
Iskra
Transistor
New Jersey Semiconductor
Trans GP BJT PNP 400V 8A 3Pin(3+Tab) TO-220AB Rail0
ON Semiconductor
TO-220AB PNP 400V 8A
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