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MJE5852G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-220-3

Description:

TO-220AB PNP 400V 8A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

MJE5852G Datasheet (9 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page 7 Page 9 Page

MJE5852G Datasheet PDF (9 Pages)

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MJE5852G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

-400 V

Current Rating

-8.00 A

Case/Package

TO-220-3

Number of Positions

3 Position

Polarity

PNP, P-Channel

Power Dissipation

80 W

Breakdown Voltage (Collector to Emitter)

400 V

Thermal Resistance

1.25℃/W (RθJC)

Continuous Collector Current

hFE Min

5 @5A, 5V

Input Power (Max)

80 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

80000 mW

View Datasheet >

MJE5852G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Material

Silicon

Size-Length

10.28 mm

Size-Width

4.83 mm

Size-Height

9.28 mm

Operating Temperature

-65℃ ~ 150℃

View Datasheet >

MJE5852G Environmental

MJE5852G Export Classifications

MJE5852G Function Overview

MJE5852G Documents

MJE5852G Datasheet

ON Semiconductor

9 Pages / 0.21 MByte

MJE5852G Other Datasheet PDF

ON Semiconductor

20 Pages / 2.6 MByte

MJE5852G Notice File

ON Semiconductor

6 Pages / 0.07 MByte

MJE5852G Other References

ON Semiconductor

1 Pages / 0.13 MByte

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