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MJL21196G
$ 3.514
MJL21196G Datasheet PDF (2 Pages)
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MJL21196G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
4 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
250 V
Current Rating
16.0 A
Case/Package
TO-264-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
200 W
Breakdown Voltage (Collector to Emitter)
250 V
Continuous Collector Current
16A
hFE Min
25 @8A, 5V
hFE Max
100
Input Power (Max)
200 W
DC Current Gain (hFE)
8
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200000 mW

MJL21196G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
20.3 mm
Size-Width
5.3 mm
Size-Height
26.4 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJL21196G Documents

ON Semiconductor
2 Pages / 0.19 MByte
ON Semiconductor
8 Pages / 0.16 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MJL21196 Documents

ON Semiconductor
TO-3BPL NPN 250V 16A
Motorola
SILICON POWER TRANSISTOR
ON Semiconductor
TO-3BPL NPN 250V 16A
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