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Part Datasheet Search > TVS Diodes > ON Semiconductor > MMBZ12VALT1G Datasheet PDF
MMBZ12VALT1G
$ 0.039
MMBZ12VALT1G Datasheet PDF (7 Pages)
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MMBZ12VALT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
12.0 V
Case/Package
SOT-23-3
Power Rating
40.0 W
Breakdown Voltage
12.0 V
Number of Circuits
2 Circuit
Number of Positions
3 Position
Forward Voltage
0.9 V
Power Dissipation
40 W
Clamping Voltage
17 V
Test Current
1 mA
Max Breakdown Voltage
12.6 V
Peak Pulse Power
40 W
Min Breakdown Voltage
11.4 V
Reverse Breakdown Voltage
11.4 V
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 150℃
Power Dissipation (Max)
300 mW

MMBZ12VALT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBZ12VALT1G Documents

ON Semiconductor
7 Pages / 0.07 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
7 Pages / 0.15 MByte
ON Semiconductor
14 Pages / 0.63 MByte

MMBZ12VALT1 Documents

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