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MPS8099G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-92-3

Description:

TO-92 NPN 80V 0.5A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

MPS8099G Datasheet (7 Pages)

Package Outline Dimension on7 Page

Part Numbering System on1 Page 3 Page 7 Page

MPS8099G Datasheet PDF (7 Pages)

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MPS8099G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

150 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

80.0 V

Current Rating

500 mA

Case/Package

TO-92-3

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

625 mW

Breakdown Voltage (Collector to Emitter)

80 V

Thermal Resistance

83.3℃/W (RθJC)

Continuous Collector Current

0.5A

hFE Min

100 @1mA, 5V

Input Power (Max)

625 mW

DC Current Gain (hFE)

150

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

625 mW

View Datasheet >

MPS8099G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Bulk

Material

Silicon

Size-Length

5.2 mm

Size-Width

4.19 mm

Size-Height

5.33 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

MPS8099G Environmental

MPS8099G Export Classifications

MPS8099G Function Overview

MPS8099G Documents

MPS8099G Datasheet

ON Semiconductor

7 Pages / 0.08 MByte

MPS8099G Other Datasheet PDF

ON Semiconductor

9 Pages / 0.19 MByte

MPS8099G Notice File

ON Semiconductor

1 Pages / 0.07 MByte

MPS8099G Other References

ON Semiconductor

1 Pages / 0.16 MByte

MPS8099 Documents

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ON Semiconductor

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New Jersey Semiconductor

Trans GP BJT NPN 80V 0.5A 3Pin TO-92 Box

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