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MPSA05G
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MPSA05G Datasheet PDF (7 Pages)
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MPSA05G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
500 mA
Case/Package
TO-92-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
60 V
Thermal Resistance
83.3℃/W (RθJC)
Continuous Collector Current
0.5A
hFE Min
100 @100mA, 1V
Input Power (Max)
625 mW
DC Current Gain (hFE)
100
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.5 W

MPSA05G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MPSA05G Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
1 Pages / 0.07 MByte
ON Semiconductor
1 Pages / 0.16 MByte

MPSA05 Documents

ON Semiconductor
Trans GP BJT NPN 60V 0.5A 3Pin TO-92 Bulk
Fairchild
Trans GP BJT NPN 60V 0.5A 3Pin TO-92 Bulk
CJ
TO-92 NPN 60V 500mA
NTE Electronics
Npn 500mA 60V To-226aa
UTC
TO-92 NPN 60V 0.5A
Central Semiconductor
Bipolar Transistors - BJT Complementary Trans 60Vcbo 60Vceo 500mA
KEC(Korea Electronics)
Trans GP BJT NPN 60V 0.5A 3Pin TO-92
Diodes
TRANSISTOR 60V NPN TO92-3
Continental Device
NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Freescale
Amplifier Transistors
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