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MTB3N100E
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MTB3N100E Datasheet PDF (12 Pages)
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MTB3N100E Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
D2PAK-263
Polarity
N-CH
Drain to Source Voltage (Vds)
1000 V
Continuous Drain Current (Ids)
3A
Rise Time
19 ns
Input Capacitance (Ciss)
1316pF @25V(Vds)
Fall Time
33 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

MTB3N100E Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Rail
Material
Silicon

MTB3N100E Documents

ON Semiconductor
12 Pages / 0.27 MByte

MTB3N100 Documents

ON Semiconductor
D2PAK N-CH 1000V 3A
Motorola
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4Ω
Motorola
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4Ω
Freescale
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4Ω
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