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MTW32N20E
$ 4.578
MTW32N20E Datasheet PDF (7 Pages)
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MTW32N20E Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
32.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
0.075 Ω
Polarity
N-Channel
Power Dissipation
180 W
Input Capacitance
3600pF @25V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
32.0 A
Rise Time
120 ns
Input Capacitance (Ciss)
5000pF @25V(Vds)
Fall Time
91 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
180W (Tc)

MTW32N20E Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.08 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MTW32N20E Documents

ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
10 Pages / 0.15 MByte

MTW32N20 Documents

ON Semiconductor
TRIAC, Power MOSFET; TO-247; 600V; N; 200VDC; 200VDC; 50mA (Max.); 32A
ON Semiconductor
TO-247 N-CH 200V 32A
Motorola
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075Ω
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