MUN5233T1G Datasheet PDF - ON Semiconductor

●Thanks to ON Semiconductor"s NPN MUN5233T1G digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.