N25Q128A11ESE40G Datasheet PDF - Micron

●The N25Q128A11ESE40G is a Serial NOR Flash Memory can be writing protected by software through volatile and non-volatile protection features, depending on the application needs. The protection granularity is of 64kB for volatile protections. This is the high-performance multiple input/output serial flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for read and program operations. The memory is organized as 64kB main sectors that are further divided into 16 subsectors each. The memory can be erased one 4kB subsector at a time, 64kB sectors at a time or as a whole.

● Dual/quad I/O instruction provides increased throughput up to 432MHz

● Program/erase suspend operations

● Minimum 100000 erase cycles per sector

● More than 20 years data retention