NDT451AN Datasheet PDF - ON Semiconductor

●The NDT451AN is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. It is particularly suited for low voltage applications such as DC-to-DC conversion where fast switching, low in-line power loss and resistance to transients are needed.

● High density cell design for extremely low RDS (ON)

● High power and current handling capability in a widely used surface-mount package