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Part Datasheet Search > IGBTs > ON Semiconductor > NGTB50N120FL2WG Datasheet PDF
NGTB50N120FL2WG
$ 0.727
NGTB50N120FL2WG Datasheet PDF (8 Pages)
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NGTB50N120FL2WG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
535 W
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
256 ns
Input Power (Max)
535 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
535 W

NGTB50N120FL2WG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.25 mm
Size-Width
5.3 mm
Size-Height
21.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

NGTB50N120FL2WG Documents

ON Semiconductor
8 Pages / 0.1 MByte
ON Semiconductor
7 Pages / 0.1 MByte
ON Semiconductor
4 Pages / 0.16 MByte

NGTB50N120FL2 Documents

ON Semiconductor
Trans IGBT Chip N-CH 1200V 100A 535000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 200A 536000mW 3Pin(3+Tab) TO-247 Tube
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