STPSC10H065DI Datasheet PDF - ST Microelectronics

●The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

●Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

●Key Features

● No or negligible reverse recovery

● Switching behavior independent of temperature

● Dedicated to PFC applications

● High forward surge capability

● Insulated package: TO-220AC Ins

● Insulated voltage: 2500 VRMS sine

● Typical package capacitance: 7 pF