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NTD110N02R
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NTD110N02R Datasheet PDF (6 Pages)
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NTD110N02R Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
24.0 V
Current Rating
110 A
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
4.10 mΩ
Polarity
N-Channel
Power Dissipation
1.5W (Ta), 110W (Tc)
Threshold Voltage
2 V
Input Capacitance
3.44 nF
Gate Charge
28.0 nC
Drain to Source Voltage (Vds)
24 V
Breakdown Voltage (Drain to Source)
24.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
110 A
Input Capacitance (Ciss)
3440pF @20V(Vds)
Input Power (Max)
1.5 W
Power Dissipation (Max)
1.5W (Ta), 110W (Tc)

NTD110N02R Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)
Minimum Packing Quantity
2500

NTD110N02R Documents

ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
31 Pages / 0.08 MByte

NTD110N02 Documents

ON Semiconductor
Power MOSFET 24V 110A 4.6mOhm Single N-Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
ON Semiconductor
DPAK-SL N-CH 24V 32A
ON Semiconductor
DPAK-SL N-CH 24V 32A
ON Semiconductor
DPAK N-CH 24V 32A
ON Semiconductor
DPAK N-CH 24V 32A
ON Semiconductor
DPAK-3 N-CH 24V 110A 6.2mΩ
ON Semiconductor
TRANS MOSFET N-CH 24V 32A 3Pin(2+TAB) DPAK RAIL
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