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NTD18N06L-1G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

TO-251-3

Description:

IPAK N-CH 60V 18A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

NTD18N06L-1G Application Note (9 Pages)

NTD18N06L-1G Datasheet PDF (9 Pages)

View Datasheet

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NTD18N06L-1G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Voltage Rating (DC)

60.0 V

Current Rating

18.0 A

Case/Package

TO-251-3

Drain to Source Resistance (on) (Rds)

54.0 mΩ

Polarity

N-Channel

Power Dissipation

2.1 W

Input Capacitance

710 pF

Gate Charge

30.0 nC

Drain to Source Voltage (Vds)

60 V

Breakdown Voltage (Drain to Source)

60.0 V

Breakdown Voltage (Gate to Source)

±15.0 V

Continuous Drain Current (Ids)

18.0 A

Input Capacitance (Ciss)

675pF @25V(Vds)

Input Power (Max)

55 W

Power Dissipation (Max)

2.1 W

NTD18N06L-1G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

NTD18N06L-1G Environmental

NTD18N06L-1G Export Classifications

NTD18N06L-1G Function Overview

NTD18N06L-1G Documents

NTD18N06L-1G Other Datasheet PDF

ON Semiconductor

9 Pages / 0.26 MByte

NTD18N06L-1G Application Note

ON Semiconductor

9 Pages / 0.11 MByte

NTD18N06L1 Documents

NTD18N06L-1G Datasheet PDF

ON Semiconductor

IPAK N-CH 60V 18A

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