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Part Datasheet Search > MOSFETs > ON Semiconductor > NTD18N06L-1G Datasheet PDF
NTD18N06L-1G
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NTD18N06L-1G Datasheet PDF (9 Pages)
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NTD18N06L-1G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
60.0 V
Current Rating
18.0 A
Case/Package
TO-251-3
Drain to Source Resistance (on) (Rds)
54.0 mΩ
Polarity
N-Channel
Power Dissipation
2.1 W
Input Capacitance
710 pF
Gate Charge
30.0 nC
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±15.0 V
Continuous Drain Current (Ids)
18.0 A
Input Capacitance (Ciss)
675pF @25V(Vds)
Input Power (Max)
55 W
Power Dissipation (Max)
2.1 W

NTD18N06L-1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

NTD18N06L-1G Documents

ON Semiconductor
9 Pages / 0.26 MByte
ON Semiconductor
9 Pages / 0.11 MByte

NTD18N06L1 Documents

ON Semiconductor
IPAK N-CH 60V 18A
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