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Part Datasheet Search > MOSFETs > ON Semiconductor > NTE4153NT1G Datasheet PDF
NTE4153NT1G
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NTE4153NT1G Datasheet PDF (6 Pages)
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NTE4153NT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
20.0 V
Current Rating
915 mA
Case/Package
SC-89-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.127 Ω
Polarity
N-Channel
Power Dissipation
300 mW
Threshold Voltage
760 mV
Input Capacitance
110pF @16V
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
26 V
Breakdown Voltage (Gate to Source)
±6.00 V
Continuous Drain Current (Ids)
915 mA
Rise Time
4.4 ns
Input Capacitance (Ciss)
110pF @16V(Vds)
Input Power (Max)
300 mW
Fall Time
7.6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

NTE4153NT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
1.7 mm
Size-Width
0.95 mm
Size-Height
0.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTE4153NT1G Documents

ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
7 Pages / 0.22 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
12 Pages / 0.16 MByte
ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
1 Pages / 0.15 MByte

NTE4153NT1 Documents

ON Semiconductor
Small Signal MOSFET 20V 915mA 230mOhm Single N-Channel SC-89 with ESD Protection, SC-89, 3 LEAD, 3000-REEL
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