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Part Datasheet Search > MOSFETs > ON Semiconductor > NTHD3101FT1G Datasheet PDF
NTHD3101FT1G
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NTHD3101FT1G Datasheet PDF (7 Pages)
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NTHD3101FT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
-20.0 V
Current Rating
-3.20 A
Case/Package
SMD-8
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.064 Ω
Polarity
N-Channel, P-Channel
Power Dissipation
2.1 W
Threshold Voltage
1.5 V
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
4.40 A
Rise Time
11.7 ns
Input Capacitance (Ciss)
680pF @10V(Vds)
Input Power (Max)
1.1 W
Fall Time
12.4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.1W (Ta)

NTHD3101FT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Width
1.65 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTHD3101FT1G Documents

ON Semiconductor
7 Pages / 0.11 MByte
ON Semiconductor
10 Pages / 0.2 MByte
ON Semiconductor
1 Pages / 0.15 MByte

NTHD3101FT1 Documents

ON Semiconductor
Trans MOSFET P-CH Si 20V 3.2A 8Pin Chip FET T/R
ON Semiconductor
ON SEMICONDUCTOR NTHD3101FT1G MOSFET Transistor, With Schottky Diode, P Channel, -3.2A, -20V, 0.064Ω, -4.5V, -1.5V
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