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Part Datasheet Search > MOSFETs > ON Semiconductor > NTJD5121NT1G Datasheet PDF
NTJD5121NT1G
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NTJD5121NT1G Datasheet PDF (6 Pages)
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NTJD5121NT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
SOT-363
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
1 Ω
Polarity
Dual N-Channel
Power Dissipation
266 mW
Threshold Voltage
1.7 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
330 mA, 295 mA
Rise Time
34 ns
Maximum Forward Voltage (Max)
1.2 V
Input Capacitance (Ciss)
26pF @20V(Vds)
Input Power (Max)
250 mW
Fall Time
32 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
266 mW

NTJD5121NT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.2 mm
Size-Width
1.35 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTJD5121NT1G Documents

ON Semiconductor
6 Pages / 0.06 MByte
ON Semiconductor
48 Pages / 1.8 MByte
ON Semiconductor
9 Pages / 0.18 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.04 MByte
ON Semiconductor
4 Pages / 0.06 MByte

NTJD5121NT1 Documents

ON Semiconductor
SC-88 N-CH 60V 0.295A
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