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Part Datasheet Search > MOSFETs > ON Semiconductor > NTR4003NT3G Datasheet PDF
NTR4003NT3G
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NTR4003NT3G Datasheet PDF (5 Pages)
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NTR4003NT3G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.5 Ω
Polarity
N-Channel
Power Dissipation
830 mW
Threshold Voltage
800 mV
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30.0 V
Continuous Drain Current (Ids)
560 mA
Rise Time
47.9 ns
Input Capacitance (Ciss)
21pF @5V(Vds)
Input Power (Max)
690 mW
Fall Time
64.2 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
690mW (Ta)

NTR4003NT3G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTR4003NT3G Documents

ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
5 Pages / 0.08 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
5 Pages / 0.06 MByte
ON Semiconductor
5 Pages / 0.31 MByte

NTR4003NT3 Documents

ON Semiconductor
Small Signal MOSFET 30V 560mA 1.5Ω Single N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 10000-REEL
Leshan Radio
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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