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Part Datasheet Search > Schottky Diodes > ON Semiconductor > RB751V40T1G Datasheet PDF
RB751V40T1G
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RB751V40T1G Datasheet PDF (4 Pages)
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RB751V40T1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
2 Pin
Voltage Rating (DC)
40.0 V
Current Rating
30.0 mA
Capacitance
2.50 pF
Case/Package
SOD-323
Output Current
≤30.0 mA
Number of Positions
2 Position
Forward Voltage
370mV @1mA
Polarity
Standard
Power Dissipation
200 kW
Thermal Resistance
635℃/W (RθJA)
Reverse recovery time
6 ns
Max Breakdown Voltage
30 V
Forward Current
30 mA
Max Forward Surge Current (Ifsm)
500 mA
Maximum Forward Voltage (Max)
370 mV
Forward Current (Max)
30 mA
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
150 ℃
Power Dissipation (Max)
200 mW

RB751V40T1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
1.7 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃

RB751V40T1G Documents

ON Semiconductor
4 Pages / 0.05 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
4 Pages / 0.32 MByte
ON Semiconductor
1 Pages / 0.15 MByte

RB751V40T1 Documents

ON Semiconductor
Diode Schottky 40V 0.03A 2Pin SOD-323 T/R
Won-Top Electronics
Rectifier Diode, Schottky, 1 Element, 0.03A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2
Leshan Radio
Rectifier Diode, Schottky, 1 Element, 0.03A, 40V V(RRM), Silicon, SC-76, 2 PIN
ON Semiconductor
ON SEMICONDUCTOR RB751V40T1G Small Signal Schottky Diode, Single, 30V, 30mA, 370mV, 500mA, 150℃
Leshan Radio
Rectifier Diode, Schottky, 1 Element, 0.03A, 40V V(RRM), Silicon, SC-76, 2 PIN
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