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RFD3055LESM9A Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

TO-252-3

Description:

Trans MOSFET N-CH Si 60V 11A 3Pin(2+Tab) DPAK T/R

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Documentation:

RFD3055LESM9A Datasheet (8 Pages)

Part Numbering System on1 Page

RFD3055LESM9A Datasheet PDF (8 Pages)

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RFD3055LESM9A Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.107 Ω

Power Dissipation

38 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

60 V

Rise Time

105 ns

Input Capacitance (Ciss)

350pF @25V(Vds)

Input Power (Max)

38 W

Fall Time

39 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

38 W

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RFD3055LESM9A Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Material

Silicon

Size-Length

6.73 mm

Size-Width

6.22 mm

Size-Height

2.39 mm

Operating Temperature

-55℃ ~ 175℃

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RFD3055LESM9A Environmental

RFD3055LESM9A Function Overview

RFD3055LESM9A Documents

RFD3055LESM9A Datasheet

ON Semiconductor

8 Pages / 0.59 MByte

RFD3055LESM9A Other Datasheet PDF

ON Semiconductor

22 Pages / 1.27 MByte

RFD3055LESM9A Notice File

ON Semiconductor

7 Pages / 0.87 MByte

RFD3055LESM9 Documents

RFD3055LESM9A Datasheet PDF

Fairchild

Trans MOSFET N-CH 60V 11A 3Pin(2+Tab) DPAK T/R

RFD3055LESM9A Datasheet PDF

ON Semiconductor

Trans MOSFET N-CH Si 60V 11A 3Pin(2+Tab) DPAK T/R

RFD3055LESM9A Datasheet PDF

Harris

Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

RFD3055LESM9A Datasheet PDF

Intersil

Trans MOSFET N-CH 60V 11A 3Pin(2+Tab) DPAK

RFD3055LESM9A Datasheet PDF

Harting Technology Group

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