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Part Datasheet Search > MOSFETs > ROHM Semiconductor > RQ3E150GNTB Datasheet PDF
RQ3E150GNTB
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RQ3E150GNTB Datasheet PDF (13 Pages)
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RQ3E150GNTB Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
HSMT-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0047 Ω
Polarity
N-Channel
Power Dissipation
2 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
15A
Rise Time
5.8 ns
Input Capacitance (Ciss)
850pF @15V(Vds)
Fall Time
7.8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2W (Ta), 17.2W (Tc)

RQ3E150GNTB Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)

RQ3E150GNTB Documents

ROHM Semiconductor
13 Pages / 2.41 MByte
ROHM Semiconductor
12 Pages / 1.01 MByte

RQ3E150 Documents

ROHM Semiconductor
HSMT N-CH 30V 15A
ROHM Semiconductor
HSMT N-CH 30V 15A
ROHM Semiconductor
HSMT N-CH 30V 15A
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