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STGP20H60DF Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

IGBTs

Case Package:

TO-220-3

Description:

Trans IGBT Chip N-CH 600V 20A 100000mW 3Pin(3+Tab) TO-220 Tube

Pictures:

3D Model

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Product Pictures

Documentation:

STGP20H60DF Datasheet (22 Pages)

Package Outline Dimension on13 Page 14 Page 15 Page 16 Page 17 Page

STGP20H60DF Datasheet PDF (22 Pages)

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STGP20H60DF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Power Dissipation

167 W

Breakdown Voltage (Collector to Emitter)

600 V

Reverse recovery time

90 ns

Input Power (Max)

167 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

100000 mW

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STGP20H60DF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

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STGP20H60DF Environmental

STGP20H60DF Export Classifications

STGP20H60DF Function Overview

STGP20H60DF Documents

STGP20H60DF Datasheet

ST Microelectronics

22 Pages / 1.8 MByte

STGP20H60 Documents

STGP20H60DF Datasheet PDF

ST Microelectronics

Trans IGBT Chip N-CH 600V 20A 100000mW 3Pin(3+Tab) TO-220 Tube

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