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SCT2H12NZ
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SCT2H12NZ Datasheet PDF
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SCT2H12NZ Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-3
Polarity
N-CH
Drain to Source Voltage (Vds)
1700 V
Continuous Drain Current (Ids)
3.7A
Rise Time
21 ns
Input Capacitance (Ciss)
184pF @800V(Vds)
Fall Time
74 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
35000 mW

SCT2H12NZ Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

SCT2H12 Documents

ROHM Semiconductor
Silicon Carbide Power MOSFET, N Channel, 3.7A, 1.7kV, 1.15Ω, 18V, 2.8V
ROHM Semiconductor
TO-268L N-CH 1700V 4A
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