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Part Datasheet Search > MOSFETs > ROHM Semiconductor > SCT3060ALGC11 Datasheet PDF
SCT3060ALGC11
$ 5.823
SCT3060ALGC11 Datasheet PDF (15 Pages)
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SCT3060ALGC11 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
60 mΩ
Power Dissipation
165 W
Threshold Voltage
5.6 V
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
650 V
Rise Time
37 ns
Input Capacitance (Ciss)
852pF @500V(Vds)
Fall Time
21 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
165W (Tc)

SCT3060ALGC11 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
175℃ (TJ)

SCT3060ALGC11 Documents

ROHM Semiconductor
15 Pages / 0.99 MByte
ROHM Semiconductor
15 Pages / 0.99 MByte
ROHM Semiconductor
41 Pages / 0.88 MByte

SCT3060 Documents

ROHM Semiconductor
Trans MOSFET N-CH SiC 650V 39A 3Pin(3+Tab) TO-247N Tube
ROHM Semiconductor
Trans MOSFET N-CH SiC 650V 39A Tube
ROHM Semiconductor
ROHM SCT3060AL Power MOSFET, SiC, N Channel, 39A, 650V, 0.06Ω, 18V, 5.6V New
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