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SI2301BDS-T1-E3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V

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Documentation:

SI2301BDS-T1-E3 Datasheet (2 Pages)

Part Numbering System on1 Page

SI2301BDS-T1-E3 Datasheet PDF (2 Pages)

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SI2301BDS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Drain to Source Resistance (on) (Rds)

0.15 Ω

Power Dissipation

0.7 W

Drain to Source Voltage (Vds)

20 V

Rise Time

40 ns

Input Capacitance (Ciss)

375pF @6V(Vds)

Fall Time

40 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

700mW (Ta)

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SI2301BDS-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Size-Length

3.04 mm

Size-Width

1.4 mm

Size-Height

1.02 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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SI2301BDS-T1-E3 Environmental

SI2301BDS-T1-E3 Function Overview

SI2301BDS-T1-E3 Documents

SI2301BDS-T1-E3 Datasheet

Vishay Siliconix

2 Pages / 0.04 MByte

SI2301BDS-T1-E3 Other Datasheet PDF

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9 Pages / 0.2 MByte

SI2301BDS-T1-E3 Other References

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1 Pages / 0.12 MByte

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SI2301BDS-T1-E3 Datasheet PDF

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MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V

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SI2301BDS-T1-E3 Datasheet PDF

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