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SI2312BDS-T1-E3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

TRANSISTOR 3900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal

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Documentation:

SI2312BDS-T1-E3 Datasheet (5 Pages)

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SI2312BDS-T1-E3 Datasheet PDF (5 Pages)

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SI2312BDS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Drain to Source Resistance (on) (Rds)

0.047 Ω

Power Dissipation

1.25 W

Threshold Voltage

850 mV

Drain to Source Voltage (Vds)

20 V

Breakdown Voltage (Drain to Source)

20 V

Thermal Resistance

100℃/W (RθJA)

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

750mW (Ta)

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SI2312BDS-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Cut Tape (CT)

Size-Length

3.04 mm

Operating Temperature

-55℃ ~ 150℃

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SI2312BDS-T1-E3 Environmental

SI2312BDS-T1-E3 Export Classifications

SI2312BDS-T1-E3 Function Overview

SI2312BDS-T1-E3 Documents

SI2312BDS-T1-E3 Datasheet

Vishay Siliconix

5 Pages / 0.1 MByte

SI2312BDS-T1-E3 Other Datasheet PDF

Vishay Siliconix

8 Pages / 0.21 MByte

SI2312BDS-T1-E3 Other References

Vishay Siliconix

1 Pages / 0.12 MByte

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SI2312BDS-T1-E3 Datasheet PDF

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