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SI2315BDS-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

SOT-23-3P-CH 12V 3A 100mΩ

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

SI2315BDS-T1-E3 Datasheet (8 Pages)

Package Outline Dimension on6 Page

Part Numbering System on1 Page

SI2315BDS-T1-E3 Datasheet PDF (8 Pages)

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SI2315BDS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Power Rating

1.19 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.04 Ω

Polarity

P-Channel

Power Dissipation

1.19 W

Drain to Source Voltage (Vds)

12 V

Breakdown Voltage (Gate to Source)

±8.00 V

Continuous Drain Current (Ids)

-3.00 A

Rise Time

35 ns

Input Capacitance (Ciss)

715pF @6V(Vds)

Input Power (Max)

750 mW

Fall Time

50 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1190 mW

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SI2315BDS-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

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SI2315BDS-T1-E3 Environmental

SI2315BDS-T1-E3 Function Overview

SI2315BDS-T1-E3 Documents

SI2315BDS-T1-E3 Datasheet

VISHAY

8 Pages / 0.17 MByte

SI2315BDS-T1-E3 Other Datasheet PDF

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10 Pages / 0.24 MByte

SI2315BDS-T1-E3 Notice File

VISHAY

2 Pages / 0.09 MByte

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