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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI3441BDV-T1-E3 Datasheet PDF
SI3441BDV-T1-E3
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SI3441BDV-T1-E3 Datasheet PDF (2 Pages)
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SI3441BDV-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
TSOP
Drain to Source Resistance (on) (Rds)
0.09 Ω
Polarity
P-Channel
Power Dissipation
1.25 W
Drain to Source Voltage (Vds)
-20.0 V
Continuous Drain Current (Ids)
-2.45 A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

SI3441BDV-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
3.1 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃

SI3441BDV-T1-E3 Documents

Vishay Semiconductor
2 Pages / 0.05 MByte
Vishay Semiconductor
10 Pages / 0.19 MByte

SI3441BDVT1 Documents

Vishay Siliconix
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.07Ω; ID -2.45A; TSOP-6; PD 0.86W; VGS +/-8V
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.07Ω; ID -2.45A; TSOP-6; PD 0.86W; VGS +/-8V
Vishay Siliconix
MOSFET P-CH 20V 2.45A 6-TSOP
Vishay Semiconductor
VISHAY SI3441BDV-T1-GE3 MOSFET Transistor, P Channel, -2.45A, -20V, 90mohm, -4.5V, -850mV
VISHAY
TSOP P-CH 20V 2.45A
VISHAY
MOSFET P-CH 20V 2.45A 6-TSOP
Vishay Intertechnology
Vishay Intertechnology
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