Part 3D Model

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SI4362DY-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

Description:

SOIC N-CH 30V 20A

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

SI4362DY-T1-E3 Datasheet (8 Pages)

Package Outline Dimension on5 Page

Part Numbering System on1 Page

SI4362DY-T1-E3 Datasheet PDF (8 Pages)

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SI4362DY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

Drain to Source Resistance (on) (Rds)

4.50 mΩ

Polarity

N-Channel

Power Dissipation

3.50 W

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Gate to Source)

±12.0 V

Continuous Drain Current (Ids)

20.0 A

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SI4362DY-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

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SI4362DY-T1-E3 Environmental

SI4362DY-T1-E3 Documents

SI4362DY-T1-E3 Datasheet

VISHAY

8 Pages / 0.17 MByte

SI4362DY-T1-E3 Other Datasheet PDF

VISHAY

14 Pages / 0.17 MByte

SI4362DYT1 Documents

SI4362DY-T1 Datasheet PDF

VISHAY

SOIC N-CH 30V 20A

SI4362DY-T1 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 30V 20A 8Pin SOIC N T/R

SI4362DY-T1-E3 Datasheet PDF

VISHAY

SOIC N-CH 30V 20A

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