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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI4420BDY-T1-GE3 Datasheet PDF
SI4420BDY-T1-GE3
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SI4420BDY-T1-GE3 Datasheet PDF (9 Pages)
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SI4420BDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Number of Pins
8 Pin
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
0.011 Ω
Polarity
N-Channel
Power Dissipation
1.4 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
13.5 A
Rise Time
11 ns
Fall Time
12 ns
Operating Temperature (Max)
150 ℃

SI4420BDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃

SI4420BDY-T1-GE3 Documents

Vishay Semiconductor
9 Pages / 0.24 MByte
Vishay Semiconductor
9 Pages / 0.24 MByte

SI4420BDYT1 Documents

VISHAY
SOIC-8 N-CH 30V 9.5A 8.5mΩ
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
VISHAY
SOIC-8 N-CH 30V 9.5A 8.5mΩ
Vishay Siliconix
MOSFET N-CH 30V 9.5A 8-SOIC
Vishay Semiconductor
Trans MOSFET N-CH 30V 9.5A 8Pin SOIC N T/R
Vishay Intertechnology
Vishay Intertechnology
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