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Part Datasheet Search > MOSFETs > VISHAY > SI4464DY-T1-GE3 Datasheet PDF
SI4464DY-T1-GE3
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SI4464DY-T1-GE3 Datasheet PDF (8 Pages)
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SI4464DY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
240 mΩ
Polarity
N-CH
Power Dissipation
2.5 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
1.7A
Rise Time
12 ns
Input Power (Max)
1.5 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.5 W

SI4464DY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.55 mm
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
2500

SI4464DY-T1-GE3 Documents

VISHAY
8 Pages / 0.15 MByte
VISHAY
10 Pages / 0.17 MByte

SI4464DYT1 Documents

VISHAY
SOIC N-CH 200V 1.7A
VISHAY
SOIC-8 N-CH 200V 1.7A 240mΩ
VISHAY
SOIC-8 N-CH 200V 1.7A 240mΩ
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.195Ω; ID 1.7A; SO-8; PD 1.5W; VGS +/-20V
Vishay Siliconix
TRANSISTOR 1700mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.195Ω; ID 1.7A; SO-8; PD 1.5W; VGS +/-20V
Vishay Semiconductor
MOSFET 200V 2.2A 2.5W 240mohm @ 10V
Vishay Intertechnology
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